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晶体尺寸:10毫米
电学性能:半导体
晶体结构:斜方晶系
晶胞参数:a = 0.4025nm,B = 1.117nm,C = 1.135nm,α=β=γ= 9
晶体类型:合成
晶体纯度:>99.995%
表征方法:XRD,拉曼,EDX,霍尔测量
XRD of a single crystal Bi2S3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
EDX of a single crystal Bi2S3.
Raman of a single crystal Bi2S3. Measurement with a 785nm Raman at room temperature.
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